ds30166 rev. 5 - 1 1 of 3 MMST6427 www.diodes.com diodes incorporated MMST6427 npn surface mount darlington transistor epitaxial planar die construction ideal for medium power amplification and switching high current gain ultra-small surface mount package also available in lead free version characteristic symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 12 v collector current - continuous (note 1) i c 500 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features a m j l e d b c h k g b e c mechanical data case: sot-323, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 2): k1d ordering & date code information: see page 2 weight: 0.006 grams (approx.) maximum ratings @ t a = 25 c unless otherwise specified sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. e b c
ds30166 rev. 5 - 1 2 of 3 MMST6427 www.diodes.com characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo 40 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 100ma, i b = 0 emitter-base breakdown voltage v (br)ebo 12 v i e = 10 a, i c = 0 collector cutoff current i cbo 50 na v cb = 30v, i e = 0 collector cutoff current i ceo 1.0 a v ce = 25v, i b = 0 emitter cutoff current i ebo 50 na v eb = 10v, i c = 0 on characteristics (note 2) dc current gain h fe 10,000 20,000 14,000 100,000 200,000 140,000 i c = 10ma, v ce = 5.0v i c = 100ma, v ce = 5.0v i c = 500ma, v ce = 5.0v collector-emitter saturation voltage v ce(sat) 1.2 1.5 v i c = 50ma, i b = 0.5ma i c = 500ma, i b = 0.5ma base-emitter saturation voltage v be(sat) 2.0 v i c = 500ma, i b = 0.5ma base-emitter on voltage v be(on) 1.75 v i c = 50ma, v ce =5.0v small signal characteristics output capacitance c obo 8.0 typical pf v cb = 10v, f = 1.0mhz, i e = 0 input capacitance c ibo 15 typical pf v eb = 0.5v, f = 1.0mhz, i c = 0 electrical characteristics @ t a = 25 c unless otherwise specified ordering information (note 3) device packaging shipping MMST6427-7 sot-323 3000/tape & reel notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: MMST6427-7-f. marking information k1d= product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd k1d ym year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30166 rev. 5 - 1 3 of 3 MMST6427 www.diodes.com 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 0 1 10 100 1000 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current t = 25c a t = -50c a t = 150c a 0.45 0.40 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.10 1.05 1.00 i c i b = 1000 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 4, base emitter voltage vs. collector current t = 25c a t = -50c a t = 150c a 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1 . 6 1.5 1.4 v=5v ce 100 1000 100000 1000000 10000 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 3, dc current gain vs collector current t = -50c a t=25c a t = 150c a v=5v ce 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 5, gain bandwidth product vs collector current v=5v ce
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